Part Number Hot Search : 
0C0G2A 00C562 DWF70A30 BA60BC0 TFDU6102 5VT54C AN3004 A1117
Product Description
Full Text Search
 

To Download 2SK3666G-AE3-R Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  unisonic technologies co., ltd 2sk3666 preliminary jfet www.unisonic.com.tw 1 of 4 copyright ? 2015 unisonic technologies co., ltd qw-r206-109.a n-channel junctin silicon fet ? description the utc 2sk3666 is an n-channel junctin silicon fet, it uses utc?s advanced technology to provide the customers with low i gss and low c rss . the utc 2sk3666 is suitable for low-frequency general-purpose amplifier, impedance conversion, infrared sensor applications. ? features * low i gss * low c rss ? ordering information ordering number package pin assignment packing 1 2 3 2SK3666G-AE3-R sot-23 s d g tape reel note: pin assignment: a: anode k: cathode (1) r: tape reel (2) ae3: sot-23 (3) g: halogen free and lead free 2sk3666g -ae3 -r (1)packing type (2)package type (3)green package ? marking 3666g
2sk3666 preliminary jfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r206-109.a ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 30 v gate-drain voltage v gds -30 v gate current i g 10 ma drain current continuous i d 10 ma power dissipation p d 200 mw junction temperature t j 150 c storage temperature range t stg -55~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics gate-drain breakdown voltage v ( br ) gds i g =-10a, v ds =0v -30 v drain-source leakage current i dss v ds =10v, v gs =0v 0.6 6.0 ma gate-source leakage current i gss v gs =-20v, v ds =0v -1.0 na forward transfer admittance yfs v gs =0v, v ds =10v, f=1khz 3.0 6.5 ms on characteristics cutoff voltage v gs ( off ) v ds =10v, i d =1a -0.18 -0.95 -2.2 v static drain-source on-state resistance r ds ( on ) v gs =0v, v ds =10mv 270 ? dynamic parameters input capacitance c iss v gs =0v, v ds =10v, f=1.0mhz 4 pf reverse transfer capacitance c rss 1.1 pf ? classification of i dss rank 2 3 4 range 0.6 ~ 1.5 1. 2 ~ 3.0 2.5 ~6.0
2sk3666 preliminary jfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r206-109.a
2sk3666 preliminary jfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r206-109.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.


▲Up To Search▲   

 
Price & Availability of 2SK3666G-AE3-R

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X